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Power Bipolar Transistor

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Power Bipolar Transistor

Features：
Application：

IC(A) 25℃

0.18 0.3 0.4 0.8 1 1.2 1.5 2 2.5 3 3.5 4 5 7 8 10 12
BVCEO(min)

200 250 260 400 440 450 480 500
BVCEO(Typ)

250 280 300 450 480 500 520 530 540
BVCBO(Min)

400 500 600 700 800 850 1100
BVCBO(Typ)

500 680 750 780 800 820 840 850 900 950 1200
HFE

10-40 15-30 20-30 20-35 25-35 25-50 60-100
TS

1.0-2.0 1.0-3.0 1.2-1.7 1.4-2.4 1.5-2.5 1.5-3.0 1.7-2.7 1.8-2.6 2.0-3.0 2.0-3.5 2.0-4.0 2.0-4.2 2.0-6.0 2.5-3.5 2.5-4.5 3.0-5.0 3.0-7.0 3.5-4.5 4.0-7.0 4.0-9.0 5.0-7.0 5.2-6.5 6.0-8.0 1.2-2.7

Product Name	IC(A) 25℃	BVCEO(min)	BVCEO(Typ)	BVCBO(Min)	BVCBO(Typ)	HFE	TS
BLD137D（TO-220&220S）	8	400	450	700	850	10-40	4.0-7.0	/	/	/	Download