EN
CN
MENU
General Information
Company Profile
Development History
Qualification and Honor
Mass Work
Party Construction News
Corporate Culture
News
Company News
Trade News
Products and Services
Led Driver Circuit
DMOS Product
Power Bipolar Transistor
Power Diode
Foundry Services
System Certificates
Contact Us
Bidding Information
Personnel Recruitment
Contact Information
Message Feedback
Privacy Policy
Terms of Service
Contact Us
General Information
Development History
Qualification and Honor
数字描述
Products and Services
Led Driver Circuit
DMOS Product
Power Bipolar Transistor
Power Diode
Foundry Services
System Certificates
News
Company News
Trade News
Mass Work
Party Construction News
Corporate Culture
Contact Us
Bidding Information
Personnel Recruitment
Contact Information
Message feedback
Products and Services
Power Bipolar Transistor
Led Driver Circuit
DMOS Product
Power Bipolar Transistor
Power Diode
Foundry Services
System Certificates
Power Bipolar Transistor
Features:
Application:
IC(A) 25℃
0.18
0.3
0.4
0.8
1
1.2
1.5
2
2.5
3
3.5
4
5
7
8
10
12
BVCEO(min)
200
250
260
400
440
450
480
500
BVCEO(Typ)
250
280
300
450
480
500
520
530
540
BVCBO(Min)
400
500
600
700
800
850
1100
BVCBO(Typ)
500
680
750
780
800
820
840
850
900
950
1200
HFE
10-40
15-30
20-30
20-35
25-35
25-50
60-100
TS
1.0-2.0
1.0-3.0
1.2-1.7
1.4-2.4
1.5-2.5
1.5-3.0
1.7-2.7
1.8-2.6
2.0-3.0
2.0-3.5
2.0-4.0
2.0-4.2
2.0-6.0
2.5-3.5
2.5-4.5
3.0-5.0
3.0-7.0
3.5-4.5
4.0-7.0
4.0-9.0
5.0-7.0
5.2-6.5
6.0-8.0
1.2-2.7
Product Name
IC(A) 25℃
BVCEO(min)
BVCEO(Typ)
BVCBO(Min)
BVCBO(Typ)
HFE
TS
MJE13003BR(TO-126&126S&251T&251S)
3
400
450
600
750
10-40
1.8-2.6
/
/
/
Download
<
1
>